| PART |
Description |
Maker |
| MMAD1108 MMAD1108E3/TR13 |
Switching Diode Array Steering Diode TVS Array
Diode Array; UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE
|
Microsemi Corporation
Microsemi, Corp.
|
| ZHMA2901 ZHMA2911 |
Diode Array Diode Array; Case Size: 19x9 mm; Packaging: Bulk 0.1 A, 40 V, 6 ELEMENT, SILICON, SIGNAL DIODE
Diode Array Diode Array 0.1 A, 40 V, 8 ELEMENT, SILICON, SIGNAL DIODE
|
Bourns, Inc.
Nichicon, Corp.
|
| BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
Infineon
|
| Q62702-A1097 BAV70S Q62702-A109 |
From old datasheet system
Silicon Switching Diode Array (For high speed switching applications Common cathode)
|
SIEMENS[Siemens Semiconductor Group]
|
| BAV99BRW08 BAV99BRW-7-F |
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY 0.15 A, 75 V, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| NSDEMP11XV6T5 NSDEMP11XV6T5G NSDEMP11XV6T1 NSDEMP1 |
Common Anode Quad Array Switching Diode 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE
|
ONSEMI[ON Semiconductor]
|
| BAS16S Q62702-A1241 |
From old datasheet system
Silicon Switching Diode Array (For high-speed switching applications Internal (galvanic) isolated Diodes in one package)
|
SIEMENS[Siemens Semiconductor Group]
|
| BAV70 Q68000-A6622 |
Silicon Switching Diode Array (For high-speed switchingFor high-speed switching) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BAS16U |
Silicon Switching Diode Array(硅开关二极管阵列)
|
SIEMENS AG
|
| BAS21U |
Silicon Switching Diode Array(硅开关二极管阵列)
|
SIEMENS AG
|
| BAW56W |
Silicon Switching Diode Array(硅开关二极管阵列，高速开关应
|
SIEMENS AG
|
| BAW101 Q62702-A712 |
Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
